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CHA5292a 37-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5292a is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 24 20 16 Vd1 Vd2 Vd3 Vd4 IN OUT Vg1 Vg2 Vg3 Vg4 Typical on jig Measurements Main Features Performances : 37-40GHz 24dBm output power @ 1dB comp. gain 24 dB 1dB gain DC power consumption, 500mA @ 3.5V Chip size : 3.43 x 1.44 x 0.07 mm 12 8 4 0 -4 -8 -12 -16 -20 30 31 32 33 34 35 36 Frequency (GHz) 37 38 39 40 S21 (dB) S11 (dB) S22 (dB) Main Characteristics Tamb. = 25C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 37 Typ 24 24 500 Max 40 Unit GHz dB dBm mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52922149 - 29-May-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5292a Electrical Characteristics Tamb = +25C, Vd = 3.5V Id =500mA Symbol Fop G G Is P1dB P03 VSWRin 37-40GHz Medium Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) Input VSWR (2) Min 37 Typ Max 40 Unit GHz dB dB dB dBm dBm 24 1 35 24 26 3:1 3.5:1 160 500 650 VSWRout Output VSWR (2) Tj Id Junction temperature for 80C backside Bias current @ small signal C mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Ig Vdg Pin Tch Ta Tstg Drain bias current Gate bias voltage Gate bias current Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Parameter Maximum Drain bias voltage with Pin max=0dBm Values +4.0 750 -2 to +0.4 -1.8 to +1.8 +6.0 +3.0 +175 -40 to +80 -55 to +125 Unit V mA V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52922149 - 29-May-02 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 37-40GHz Medium Power Amplifier Typical on Jig Measurements Bias conditions: Vd=3.5V, Vg tuned for Id = 500mA 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 30 31 32 33 34 35 36 Frequency (GHz) 37 S21 (dB) S11 (dB) S22 (dB) CHA5292a 38 39 40 Linear Gain & Return Losses versus frequency (including 1dB losses) 25 24 23 22 21 20 19 18 17 16 15 35 36 37 38 Frequence (GHz) 39 40 P-1dB-400mA Linear Gain -400mA P-1dB-500mA Linear Gain-500mA 30 29 28 27 26 25 24 23 22 21 20 Linear Gain & Output power at 1dB compression versus frequency Ref. : DSCHA52922149 - 29-May-02 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5292a 62 37-40GHz Medium Power Amplifier 3.5V, 400mA 58 54 50 46 42 38 34 30 0 2 4 6 8 Pout (dBm) 10 12 14 16 37GHz 38GHz 39GHz 40GHz IP3 (dBm) C/I3 (dBc) 62 3.5V, 500mA 58 54 50 46 42 38 IP3 (dBm) C/I3 (dBc) 37GHz 38GHz 39GHz 40GHz 34 30 0 2 4 6 8 Pout (dBm) 10 12 14 16 C/I3 versus total output power (F =10MHz) Ref. : DSCHA52922149 - 29-May-02 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 37-40GHz Medium Power Amplifier Chip Assembly and Mechanical Data To Vd1,2 DC Drain Supply 10nF CHA5292a To Vd3,4 DC Drain Supply 10nF 120pF 120pF 120pF 120pF IN OUT 120pF 120pF 120pF 120pF 10nF To Vg1,2,3,4 DC Gate Supply Feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 70m. All dimensions are in micrometers ) Ref. : DSCHA52922149 - 29-May-02 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5292a Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage 37-40GHz Medium Power Amplifier Due to 70m thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5292a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52922149 - 29-May-02 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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